Indium doping during growth of single-crystal silicon films by molecular beam epitaxy /

में बचाया:
ग्रंथसूची विवरण
OCLC:60056439
मुख्य लेखक: Knall, Johan
निगमित लेखक: Universitetet i Linköping
भाषा:English
प्रकाशित: Linkoping University, 1988.
श्रृंखला:Linkoping studies in science and technology dissertations ; v 187.
स्वरूप:

थीसिस Monograph

Note that CRL will digitize material from the collection when copyright allows.