The electrical activity of defects created in silicon single crystals during ion implantation /
保存先:
| OCLC: | 3928247 |
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| 第一著者: | |
| 団体著者: | |
| 言語: | English |
| 出版事項: |
Göteborg,
1973.
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| シリーズ: | Doktorsavhandlingar vid Chalmers tekniska högskola.
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| 主題: | |
| フォーマット: | 学位論文 Monograph Note that CRL will digitize material from the collection when copyright allows. |
| 記述事項: | Photocopy. 1974. -- 30 cm. |
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| 物理的記述: | [78] leaves : ill. |
| 書誌: | Includes bibliographical references. |
| 出版地: | Sweden. |