Deep levels in electron-irradiated and As-grown SiC power device material /

Gorde:
Xehetasun bibliografikoak
OCLC:60216468
Egile nagusia: Hemmingsson, Carl
Egile korporatiboa: Universitetet i Linköping. Department of Physics and Measurement Technology, Universitetet i Linköping
Hizkuntza:English
Argitaratua: Linköping : Department of Physics and Measurement Technology, Linköping University, 1998.
Formatua:

Thesis Monograph

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