Deep levels in electron-irradiated and As-grown SiC power device material /

Wedi'i Gadw mewn:
Manylion Llyfryddiaeth
OCLC:60216468
Prif Awdur: Hemmingsson, Carl
Awduron Corfforaethol: Universitetet i Linköping. Department of Physics and Measurement Technology, Universitetet i Linköping
Iaith:English
Cyhoeddwyd: Linköping : Department of Physics and Measurement Technology, Linköping University, 1998.
Fformat:

Traethawd Ymchwil Monograph

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