The physical properties of grown p-i-n junctions in silicon carbide /
Saved in:
| OCLC: | 20307480 |
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| Hovedforfatter: | |
| Institution som forfatter: | |
| Sprog: | English |
| Udgivet: |
Eindhoven, Netherlands :
Philips Research Laboratories,
1963.
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| Serier: | Philips research reports. Supplements ;
1963, no. 1. |
| Fag: | |
| Format: | Thesis Monograph Note that CRL will digitize material from the collection when copyright allows. |