The physical properties of grown p-i-n junctions in silicon carbide /
Salvato in:
| OCLC: | 20307480 |
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| Autore principale: | |
| Ente Autore: | |
| Lingua: | English |
| Pubblicazione: |
Eindhoven, Netherlands :
Philips Research Laboratories,
1963.
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| Serie: | Philips research reports. Supplements ;
1963, no. 1. |
| Soggetti: | |
| Natura: | Tesi Monograph Note that CRL will digitize material from the collection when copyright allows. |