The physical properties of grown p-i-n junctions in silicon carbide /
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| OCLC: | 20307480 |
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| Glavni autor: | |
| Autor kompanije: | |
| Jezik: | English |
| Izdano: |
Eindhoven, Netherlands :
Philips Research Laboratories,
1963.
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| Serija: | Philips research reports. Supplements ;
1963, no. 1. |
| Teme: | |
| Format: | Disertacija Monograph Note that CRL will digitize material from the collection when copyright allows. |