The physical properties of grown p-i-n junctions in silicon carbide /
Guardat en:
| OCLC: | 20307480 |
|---|---|
| Autor principal: | |
| Autor corporatiu: | |
| Idioma: | English |
| Publicat: |
Eindhoven, Netherlands :
Philips Research Laboratories,
1963.
|
| Col·lecció: | Philips research reports. Supplements ;
1963, no. 1. |
| Matèries: | |
| Format: | Thesis Monograph Note that CRL will digitize material from the collection when copyright allows. |