Explanation of the properties of the thin-film transistor /
Saved in:
| OCLC: | 23642099 |
|---|---|
| Main Author: | |
| Language: | English |
| Published: |
Helsinki,
State Institute for Technical Research,
1969.
|
| Series: | Valtion teknillinen tutkimuslaitos. Statens tekniska forskningsanstalt. Julkalsu
148. |
| Subjects: | |
| Format: | Thesis Monograph Note that CRL will digitize material from the collection when copyright allows. |
| LEADER | 01411cam a2200349M 4500 | ||
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| 001 | in00006103380 | ||
| 003 | OCoLC | ||
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| 008 | 891007s1969 fi 000 0 eng | ||
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| 035 | |a (OCoLC)23642099 | ||
| 040 | |a DLC |c EYM |d OCLCQ |d CRL | ||
| 049 | |a CRLL | ||
| 050 | 4 | |a QC 176 |b .G73 | |
| 099 | |a P-00357623 | ||
| 100 | 1 | |a Graeffe, Ralf. | |
| 245 | 1 | 0 | |a Explanation of the properties of the thin-film transistor / |c Ralf Graeffe. |
| 260 | |a Helsinki, |b State Institute for Technical Research, |c 1969. | ||
| 300 | |a 38 p. |b illus. |c 25 cm. | ||
| 336 | |a text |b txt |2 rdacontent. | ||
| 337 | |a unmediated |b n |2 rdamedia. | ||
| 338 | |a volume |b nc |2 rdacarrier. | ||
| 490 | 1 | |a Valtion teknillinen tutkimuslaitos. Statens tekniska forskningsanstalt. Julkalsu |v 148. | |
| 502 | |a Thesis (doctoral)--Technical University, Otaniemi. | ||
| 504 | |a Bibliography: p. [32]-33. | ||
| 650 | 0 | |a Thin films |x Electric properties. | |
| 650 | 0 | |a Transistors. | |
| 810 | 1 | |a Helsinki. |b Valtion teknillinen tutkimuslaitos. |t Julkaisu ; |v 148. | |
| 907 | |a .b20590970 |b 01-07-22 |c 02-23-06 | ||
| 998 | |a diss |b 02-23-06 |c m |d - |e - |f eng |g fi |h 0 |i 1 | ||
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