Indium doping during growth of single-crystal silicon films by molecular beam epitaxy /

Sábháilte in:
Sonraí bibleagrafaíochta
OCLC:60056439
Príomhchruthaitheoir: Knall, Johan
Údar corparáideach: Universitetet i Linköping
Teanga:English
Foilsithe / Cruthaithe: Linkoping University, 1988.
Sraith:Linkoping studies in science and technology dissertations ; v 187.
Formáid:

Tráchtas Monograph

Note that CRL will digitize material from the collection when copyright allows.

Borrow this resource

Item List

Cur síos Local Call Number Stádas
P-00458236 Ar fáil