Indium doping during growth of single-crystal silicon films by molecular beam epitaxy /

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Détails bibliographiques
OCLC:60056439
Auteur principal: Knall, Johan
Collectivité auteur: Universitetet i Linköping
Langue:English
Publié: Linkoping University, 1988.
Collection:Linkoping studies in science and technology dissertations ; v 187.
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Thèse Monograph

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