Indium doping during growth of single-crystal silicon films by molecular beam epitaxy /

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OCLC:60056439
Hlavní autor: Knall, Johan
Korporativní autor: Universitetet i Linköping
Jazyk:English
Vydáno: Linkoping University, 1988.
Edice:Linkoping studies in science and technology dissertations ; v 187.
Médium:

Diplomová práce Monograph

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