Netzwerksimulation des insulated gate bipolar transistor (IGBT) /
সংরক্ষণ করুন:
OCLC: | 49664903 |
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প্রধান লেখক: | |
সংস্থা লেখক: | |
ভাষা: | German |
প্রকাশিত: |
1993.
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বিষয়গুলি: | |
বিন্যাস: | গবেষণাপত্র Monograph Note that CRL will digitize material from the collection when copyright allows. |
LEADER | 01169nam a22003257a 4500 | ||
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001 | in00005619425 | ||
003 | OCoLC | ||
005 | 20020425090701.0 | ||
008 | 020425s1993 gw 000 0 ger d | ||
035 | |a (OCoLC)49664903 | ||
040 | |a CRL |c CRL | ||
049 | |a CRLL | ||
099 | |a P-00011446 | ||
100 | 1 | |a Cotorogea, Maria. | |
245 | 1 | 0 | |a Netzwerksimulation des insulated gate bipolar transistor (IGBT) / |c Maria Cotorogea. |
260 | |c 1993. | ||
300 | |a 139 p. | ||
336 | |a text |b txt |2 rdacontent. | ||
337 | |a unmediated |b n |2 rdamedia. | ||
338 | |a volume |b nc |2 rdacarrier. | ||
502 | |b doctorall |c Technische Universität Berlin |d 1993. | ||
653 | |a network simulations. | ||
653 | |a insulated gate bipolar transistor. | ||
653 | |a IGBT. | ||
710 | 2 | |a Technische Universität Berlin. | |
752 | |a Germany. | ||
907 | |a .b15585931 |b 03-01-22 |c 04-25-02 | ||
998 | |a diss |b 04-25-02 |c m |d - |e - |f ger |g gw |h 0 |i 1 | ||
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