The electrical activity of defects created in silicon single crystals during ion implantation /

Shranjeno v:
Bibliografske podrobnosti
OCLC:3928247
Glavni avtor: Andersson, Åke
Korporativna značnica: Chalmers tekniska högskola
Jezik:English
Izdano: Göteborg, 1973.
Serija:Doktorsavhandlingar vid Chalmers tekniska högskola.
Teme:
Format:

Thesis Monograph

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