The electrical activity of defects created in silicon single crystals during ion implantation /

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Détails bibliographiques
OCLC:3928247
Auteur principal: Andersson, Åke
Collectivité auteur: Chalmers tekniska högskola
Langue:English
Publié: Göteborg, 1973.
Collection:Doktorsavhandlingar vid Chalmers tekniska högskola.
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Description Local Call Number Statut
P-60001259 Disponible