The electrical activity of defects created in silicon single crystals during ion implantation /
Guardado en:
OCLC: | 3928247 |
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Autor principal: | |
Autor Corporativo: | |
Lenguaje: | English |
Publicado: |
Göteborg,
1973.
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Colección: | Doktorsavhandlingar vid Chalmers tekniska högskola.
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Materias: | |
Formato: | Tesis Monograph Note that CRL will digitize material from the collection when copyright allows. |