The electrical activity of defects created in silicon single crystals during ion implantation /
Guardat en:
| OCLC: | 3928247 |
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| Autor principal: | |
| Autor corporatiu: | |
| Idioma: | English |
| Publicat: |
Göteborg,
1973.
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| Col·lecció: | Doktorsavhandlingar vid Chalmers tekniska högskola.
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| Matèries: | |
| Format: | Thesis Monograph Note that CRL will digitize material from the collection when copyright allows. |