The electrical activity of defects created in silicon single crystals during ion implantation /
Guardado en:
| OCLC: | 3928247 |
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| Autor principal: | |
| Autor Corporativo: | |
| Lenguaje: | English |
| Publicado: |
Göteborg,
1973.
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| Colección: | Doktorsavhandlingar vid Chalmers tekniska högskola.
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| Materias: | |
| Formato: | Tesis Monograph Note that CRL will digitize material from the collection when copyright allows. |
| Notas: | Photocopy. 1974. -- 30 cm. |
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| Descripción Física: | [78] leaves : ill. |
| Bibliografía: | Includes bibliographical references. |
| Lugar de publicación: | Sweden. |