Characterization of degradation and failure phenomena in MOS devices /
Na minha lista:
| OCLC: | 85481206 |
|---|---|
| Autor principal: | |
| Autor Corporativo: | |
| Idioma: | English |
| Publicado em: |
1999.
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| Formato: | Tese Monograph Microform Note that CRL will digitize material from the collection when copyright allows. |
| LEADER | 01111nam a22002897a 4500 | ||
|---|---|---|---|
| 001 | in00006251219 | ||
| 003 | OCoLC | ||
| 005 | 20070301115414.0 | ||
| 008 | 070301s1999 sz b 000 0 eng d | ||
| 035 | |a (OCoLC)85481206 | ||
| 040 | |a CRL |c CRL | ||
| 049 | |a CRLL | ||
| 099 | |a P-90052400 | ||
| 100 | 1 | |a Pfäffli, Paul. | |
| 245 | 1 | 0 | |a Characterization of degradation and failure phenomena in MOS devices / |c Paul Pfäffli. |
| 260 | |c 1999. | ||
| 300 | |a 2 microfiches. | ||
| 336 | |a text |b txt |2 rdacontent. | ||
| 337 | |a microform |b h |2 rdamedia. | ||
| 338 | |a microfiche |b he |2 rdacarrier. | ||
| 502 | |b doctoral |c Swiss Federal Institute of Technology Zurich |d 1999. | ||
| 710 | 2 | |a Eidgenössische Technische Hochschule Zürich. | |
| 752 | |a Switzerland. | ||
| 907 | |a .b22103818 |b 02-28-22 |c 03-01-07 | ||
| 998 | |a diss |b 03-01-07 |c m |d b |e - |f eng |g sz |h 0 |i 1 | ||
| 999 | f | f | |i 2e93201d-dbd5-596f-9413-18a99bd6b213 |s a2526f22-d71c-50df-8d47-de85aa1e098d |t 0 |