On the origin of 1/f noise in epitaxial GaAs /
Saved in:
| OCLC: | 66161202 |
|---|---|
| Main Author: | |
| Corporate Author: | |
| Language: | English |
| Published: |
[S.l. :
s.n.],
1993.
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| Subjects: | |
| Format: | Thesis Monograph Note that CRL will digitize material from the collection when copyright allows. |
| LEADER | 01557cam a2200421Ma 4500 | ||
|---|---|---|---|
| 001 | in00006662837 | ||
| 003 | OCoLC | ||
| 005 | 20080723051554.0 | ||
| 008 | 930317s1993 ne m 000 0 eng d | ||
| 016 | 7 | |a B9327128 |2 bccb | |
| 020 | |a 9090060677 | ||
| 020 | |a 9789090060675 | ||
| 029 | 0 | |a NLGGC |b 104843357 | |
| 035 | |a (OCoLC)66161202 | ||
| 040 | |a NLGGC |e fobidrtb |b dut |c NLGGC |d CRL | ||
| 041 | 0 | |a eng |b dut | |
| 049 | |a CRLL | ||
| 084 | |a 33.72 |2 bcl | ||
| 099 | |a P-00622663 | ||
| 100 | 1 | |a Ren, Lin, |d 1964- | |
| 245 | 1 | 0 | |a On the origin of 1/f noise in epitaxial GaAs / |c Lin Ren. |
| 260 | |a [S.l. : |b s.n.], |c 1993. |e (Helmond : |f Wibro Dissertatiedrukkerij) | ||
| 300 | |a VI, 103 p. : |b ill., fig., tab. ; |c 24 cm. | ||
| 336 | |a text |b txt |2 rdacontent. | ||
| 337 | |a unmediated |b n |2 rdamedia. | ||
| 338 | |a volume |b nc |2 rdacarrier. | ||
| 502 | |b doctoral |c Technische Universiteit Eindhoven |d 1993. | ||
| 504 | |a Met lit. opg. - Met samenvatting in het Nederlands. | ||
| 650 | 1 | 7 | |a Galliumarsenide. |2 gtt. |
| 650 | 1 | 7 | |a Elektrische stroom. |2 gtt. |
| 650 | 1 | 7 | |a Ruis. |2 gtt. |
| 650 | 1 | 7 | |a Frequentieafhankelijkheid. |2 gtt. |
| 710 | 2 | |a Technische Universiteit Eindhoven. | |
| 752 | |a Netherlands. | ||
| 907 | |a .b26376295 |b 03-15-22 |c 07-23-08 | ||
| 998 | |a diss |b 07-23-08 |c m |d - |e - |f eng |g ne |h 0 |i 1 | ||
| 999 | f | f | |i 2193fe8b-f00e-5e46-b974-10805fe2b9d4 |s 915ad0fa-d566-574e-8260-965399a8d9c2 |t 0 |