Deep levels in electron-irradiated and As-grown SiC power device material /

Sparad:
Bibliografiska uppgifter
OCLC:60216468
Huvudupphovsman: Hemmingsson, Carl
Institutionella upphovsmän: Universitetet i Linköping. Department of Physics and Measurement Technology, Universitetet i Linköping
Språk:English
Publicerad: Linköping : Department of Physics and Measurement Technology, Linköping University, 1998.
Materialtyp:

Lärdomsprov Monograph

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