Deep levels in electron-irradiated and As-grown SiC power device material /

Bewaard in:
Bibliografische gegevens
OCLC:60216468
Hoofdauteur: Hemmingsson, Carl
Coauteurs: Universitetet i Linköping. Department of Physics and Measurement Technology, Universitetet i Linköping
Taal:English
Gepubliceerd in: Linköping : Department of Physics and Measurement Technology, Linköping University, 1998.
Formaat:

Thesis Monograph

Note that CRL will digitize material from the collection when copyright allows.

Borrow this resource

Item List

Omschrijving Local Call Number Status
P-00392508 Beschikbaar