Deep levels in electron-irradiated and As-grown SiC power device material /

保存先:
書誌詳細
OCLC:60216468
第一著者: Hemmingsson, Carl
共著者: Universitetet i Linköping. Department of Physics and Measurement Technology, Universitetet i Linköping
言語:English
出版事項: Linköping : Department of Physics and Measurement Technology, Linköping University, 1998.
フォーマット:

学位論文 Monograph

Note that CRL will digitize material from the collection when copyright allows.

Borrow this resource

Item List

その他の書誌記述 Local Call Number 状態
P-00392508 利用可