Deep levels in electron-irradiated and As-grown SiC power device material /

Salvato in:
Dettagli Bibliografici
OCLC:60216468
Autore principale: Hemmingsson, Carl
Enti autori: Universitetet i Linköping. Department of Physics and Measurement Technology, Universitetet i Linköping
Lingua:English
Pubblicazione: Linköping : Department of Physics and Measurement Technology, Linköping University, 1998.
Natura:

Tesi Monograph

Note that CRL will digitize material from the collection when copyright allows.

Borrow this resource

Item List

Descrizione Local Call Number Status
P-00392508 Disponibile