Deep levels in electron-irradiated and As-grown SiC power device material /

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Détails bibliographiques
OCLC:60216468
Auteur principal: Hemmingsson, Carl
Collectivités auteurs: Universitetet i Linköping. Department of Physics and Measurement Technology, Universitetet i Linköping
Langue:English
Publié: Linköping : Department of Physics and Measurement Technology, Linköping University, 1998.
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Thèse Monograph

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Description Local Call Number Statut
P-00392508 Disponible