Deep levels in electron-irradiated and As-grown SiC power device material /
Gespeichert in:
| OCLC: | 60216468 |
|---|---|
| 1. Verfasser: | |
| Körperschaften: | , |
| Sprache: | English |
| Veröffentlicht: |
Linköping :
Department of Physics and Measurement Technology, Linköping University,
1998.
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| Format: | Abschlussarbeit Monograph Note that CRL will digitize material from the collection when copyright allows. |