Deep levels in electron-irradiated and As-grown SiC power device material /
Na minha lista:
| OCLC: | 60216468 |
|---|---|
| Autor principal: | |
| Corporate Authors: | , |
| Idioma: | English |
| Publicado em: |
Linköping :
Department of Physics and Measurement Technology, Linköping University,
1998.
|
| Formato: | Thesis Monograph Note that CRL will digitize material from the collection when copyright allows. |
| LEADER | 01300cam a2200325M 4500 | ||
|---|---|---|---|
| 001 | in00006158256 | ||
| 003 | OCoLC | ||
| 005 | 00010101120000.0 | ||
| 008 | 050504s1998 sw ac 000 0 eng d | ||
| 015 | |a B9873850 | ||
| 020 | |a 9172193042 | ||
| 035 | |a (OCoLC)60216468 | ||
| 040 | |a UKV3G |c UKV3G |d CRL | ||
| 049 | |a CRLL | ||
| 099 | |a P-00392508 | ||
| 100 | 1 | |a Hemmingsson, Carl. | |
| 245 | 1 | 0 | |a Deep levels in electron-irradiated and As-grown SiC power device material / |c Carl Hemmingsson. |
| 260 | |a Linköping : |b Department of Physics and Measurement Technology, Linköping University, |c 1998. | ||
| 300 | |a 133 p. | ||
| 336 | |a text |b txt |2 rdacontent. | ||
| 337 | |a unmediated |b n |2 rdamedia. | ||
| 338 | |a volume |b nc |2 rdacarrier. | ||
| 502 | |b doctoral |c Linköpings universitet |d 1998. | ||
| 710 | 2 | |a Universitetet i Linköping. |b Department of Physics and Measurement Technology. | |
| 710 | 2 | |a Universitetet i Linköping. | |
| 752 | |a Sweden. | ||
| 907 | |a .b21146809 |b 03-28-22 |c 07-07-06 | ||
| 998 | |a diss |b 07-07-06 |c m |d - |e - |f eng |g sw |h 0 |i 1 | ||
| 999 | f | f | |i 0d0b725e-6b2c-50d1-9747-9cc4f23ba7b9 |s a063f2d9-5545-587c-98ea-4a3334a1c998 |t 0 |