APA Цитирование

Hemmingsson, C. (1998). Deep levels in electron-irradiated and As-grown SiC power device material. Department of Physics and Measurement Technology, Linköping University.

Chicago-стиль цитирования

Hemmingsson, Carl. Deep Levels in Electron-irradiated and As-grown SiC Power Device Material. Linköping: Department of Physics and Measurement Technology, Linköping University, 1998.

MLA-цитирование

Hemmingsson, Carl. Deep Levels in Electron-irradiated and As-grown SiC Power Device Material. Department of Physics and Measurement Technology, Linköping University, 1998.

Предупреждение: эти цитированмия не могут быть всегда правильны на 100%.