Hemmingsson, C. (1998). Deep levels in electron-irradiated and As-grown SiC power device material. Department of Physics and Measurement Technology, Linköping University.
Citação do estilo Chicago (17ª ed.)Hemmingsson, Carl. Deep Levels in Electron-irradiated and As-grown SiC Power Device Material. Linköping: Department of Physics and Measurement Technology, Linköping University, 1998.
Citação MLA (8ª ed.)Hemmingsson, Carl. Deep Levels in Electron-irradiated and As-grown SiC Power Device Material. Department of Physics and Measurement Technology, Linköping University, 1998.
Nota: a formatação da citação pode não corresponder 100% ao definido pela respectiva norma.