Hemmingsson, C. (1998). Deep levels in electron-irradiated and As-grown SiC power device material. Department of Physics and Measurement Technology, Linköping University.
Style de citation Chicago (17e éd.)Hemmingsson, Carl. Deep Levels in Electron-irradiated and As-grown SiC Power Device Material. Linköping: Department of Physics and Measurement Technology, Linköping University, 1998.
Style de citation MLA (8e éd.)Hemmingsson, Carl. Deep Levels in Electron-irradiated and As-grown SiC Power Device Material. Department of Physics and Measurement Technology, Linköping University, 1998.
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