Hemmingsson, C. (1998). Deep levels in electron-irradiated and As-grown SiC power device material. Department of Physics and Measurement Technology, Linköping University.
Chicago-Zitierstil (17. Ausg.)Hemmingsson, Carl. Deep Levels in Electron-irradiated and As-grown SiC Power Device Material. Linköping: Department of Physics and Measurement Technology, Linköping University, 1998.
MLA-Zitierstil (8. Ausg.)Hemmingsson, Carl. Deep Levels in Electron-irradiated and As-grown SiC Power Device Material. Department of Physics and Measurement Technology, Linköping University, 1998.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.