Hemmingsson, C. (1998). Deep levels in electron-irradiated and As-grown SiC power device material. Department of Physics and Measurement Technology, Linköping University.
Citace podle Chicago (17th ed.)Hemmingsson, Carl. Deep Levels in Electron-irradiated and As-grown SiC Power Device Material. Linköping: Department of Physics and Measurement Technology, Linköping University, 1998.
Citace podle MLA (8th ed.)Hemmingsson, Carl. Deep Levels in Electron-irradiated and As-grown SiC Power Device Material. Department of Physics and Measurement Technology, Linköping University, 1998.
Upozornění: Tyto citace jsou generovány automaticky. Nemusí být zcela správně podle citačních pravidel..