Growth of strained III-V semiconductors by molecular beam epitaxy /
Saved in:
| OCLC: | 46280247 |
|---|---|
| Main Author: | |
| Corporate Author: | |
| Language: | English |
| Published: |
Göteborg :
Univ.,
1993.
|
| Format: | Thesis Monograph Note that CRL will digitize material from the collection when copyright allows. |
| LEADER | 01159nam a2200301Mi 4500 | ||
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| 001 | in00006018714 | ||
| 003 | OCoLC | ||
| 005 | 20050531100959.0 | ||
| 008 | 940303s1993 sw 000 0 eng d | ||
| 020 | |a 9162810839 | ||
| 035 | |a (OCoLC)46280247 | ||
| 040 | |a ZXW |b ger |c ZXW |d CRL | ||
| 049 | |a CRLL | ||
| 099 | |a P-00303757 | ||
| 100 | 1 | |a Ekenstedt, Michael. | |
| 245 | 1 | 0 | |a Growth of strained III-V semiconductors by molecular beam epitaxy / |c Michael Ekenstedt. |
| 260 | |a Göteborg : |b Univ., |c 1993. | ||
| 300 | |a Getr. Zählung : |b graph. Darst + |e 10 Sonderdr. : graph. Darst. | ||
| 336 | |a text |b txt |2 rdacontent. | ||
| 337 | |a unmediated |b n |2 rdamedia. | ||
| 338 | |a volume |b nc |2 rdacarrier. | ||
| 502 | |b doctoral |c Göteborgs universitet |d 1993. | ||
| 710 | 2 | |a Göteborgs universitet. | |
| 752 | |a Sweden. | ||
| 907 | |a .b19721833 |b 03-31-22 |c 05-31-05 | ||
| 998 | |a diss |b 05-31-05 |c m |d - |e - |f eng |g sw |h 0 |i 1 | ||
| 999 | f | f | |i 0307d667-2ff4-55ec-9224-c3f377ce4fde |s 57bb9b67-9254-5229-95c0-3571cace31f1 |t 0 |